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Fast physical models for Si LDMOS power transistor characterization

By JP Everett, MJ Kearney, HA Rueda, EM Johnson, PH Aaen, J Wood and CM Snowden

Abstract

A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.

Publisher: IEEE
Year: 2011
DOI identifier: 10.1109/MWSYM.2011.5973484
OAI identifier: oai:epubs.surrey.ac.uk:7886
Provided by: Surrey Research Insight

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